| 摘要 |
A static random access memory (SRAM) is disclosed. The SRAM includes a shared contact. A gate oxide layer is firstly formed on a semiconductor substrate, and a polysilicon layer is then formed on the gate oxide layer. A dielectric spacer abuts surface of the polysilicon layer of the SRAM except on a top surface of the expect on a top surface of the polysilicon layer of the SRAM. Moreover, first ions of a first conductive type are implanted between the substrate. And second ions of the first conductive type are implanted into substrate to form a source/drain region of a first gate, and a second gate without the source/drain region using the dielectric spacers as a mask. The SRAM has at least three silicidation regions abutting top surface of the source/drain region, and the first and second gate, and the side wall second gate with no space is also covered a silicidation region. Finally, an inter-layer dielectric (ILD) is deposited over the substrate. Using conventional photolithography techniques to define, the ILD layer is then patterned and etched to form a shared contact between the gate and source/drain regions, wherein the shared contact via is used to provide electrical coupling for both the source/drain of the first gate of the SRAM and second gate of the SRAM.
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