发明名称 |
Structure of a bonding pad for semiconductor devices |
摘要 |
The invention provides a structure of a bonding pad, which comprising: a substrate; a dielectric layer formed over the substrate; a first metal layer formed in the dielectric layer; a second metal layer formed in the dielectric layer and above the first metal layer; a plurality of first plugs formed between the first metal layer and the second metal layer, wherein the plugs are used for connecting the first metal layer with the second metal layer; a third metal layer formed over the dielectric layer; and a plurality of second plugs, formed between the second metal layer and the third metal layer, wherein the second plugs are used for connecting the second metal layer with the third metal layer.
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申请公布号 |
US6100573(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19980136544 |
申请日期 |
1998.08.19 |
申请人 |
UNITED INTEGRATED CIRCUITS CORP. |
发明人 |
LU, CHANG-MING;LU, SHU-YING |
分类号 |
H01L23/485;(IPC1-7):H01L29/00;H01L23/48 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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