发明名称 Redundant circuit for semiconductor device having a controllable high voltage generator
摘要 A redundant circuit for a semiconductor device including a fuse program means producing a control signal determining whether or not a chip is normal; a high-voltage generating means producing a first voltage or second voltage according to a control signal from the fuse program means; and an on-chip redundant decoding means driven by the first voltage or second voltage produced from the high-voltage generating means. In case that the chip is normal, the high-voltage generating means generates the first voltage, and in case that the chip fails, the high-voltage generating means produces the second voltage. The first voltage is an output voltage from the high-voltage generating means, and the second voltage is an output voltage higher than the first voltage.
申请公布号 US6100748(A) 申请公布日期 2000.08.08
申请号 US19980105276 申请日期 1998.06.26
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 OH, YOUNG NAM
分类号 G11C11/401;G11C29/00;G11C29/04;H01L21/82;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):G06F11/16 主分类号 G11C11/401
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