发明名称 |
Redundant circuit for semiconductor device having a controllable high voltage generator |
摘要 |
A redundant circuit for a semiconductor device including a fuse program means producing a control signal determining whether or not a chip is normal; a high-voltage generating means producing a first voltage or second voltage according to a control signal from the fuse program means; and an on-chip redundant decoding means driven by the first voltage or second voltage produced from the high-voltage generating means. In case that the chip is normal, the high-voltage generating means generates the first voltage, and in case that the chip fails, the high-voltage generating means produces the second voltage. The first voltage is an output voltage from the high-voltage generating means, and the second voltage is an output voltage higher than the first voltage.
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申请公布号 |
US6100748(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19980105276 |
申请日期 |
1998.06.26 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
OH, YOUNG NAM |
分类号 |
G11C11/401;G11C29/00;G11C29/04;H01L21/82;H01L21/822;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):G06F11/16 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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