发明名称 Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
摘要 A hot trap converts unreacted organic metal-film precursor from the exhaust stream of a CVD process. The converted precursor forms a metal film on the surface of the hot trap, thereby protecting hot vacuum pump surfaces from metal build up. A cold trap downstream from the hot trap freezes effluents from the exhaust stream. The metal captured by the hot trap and the effluents captured by the cold trap may then be recycled, rather than being released as environmental emissions.
申请公布号 US6099649(A) 申请公布日期 2000.08.08
申请号 US19970996735 申请日期 1997.12.23
申请人 APPLIED MATERIALS, INC. 发明人 SCHMITT, JOHN VINCENT;CHEN, LING;BLEYLE, GEORGE MICHAEL;CONG, YU;MAK, ALFRED;CHANG, MEI
分类号 B01D8/00;B01D53/00;B01D53/72;C23C16/44;C30B25/14;H01J37/32;(IPC1-7):C23C16/00 主分类号 B01D8/00
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