Method for producing semiconductor device

摘要

Three independent methods for producing a semiconductor device which acts as a monolithic capacitor including a first embodiment having a step for removing SiO2 particles deposited in space remained under a conductive polycrystalline Si layer having a rugged surface, for the purpose to eliminate possibilities in which dust is produced in the process, a second embodiment having a step for producing an SiO2 layer on a conductive polycrystalline Si layer having a rugged surface employing a CVD process which employs thermal decomposition of TEOS in an excess volume of O3 in which no SiO2 particles are produced in space remained under a conductive polycrystalline Si layer having a rugged surface and a third embodiment in which a step for producing a conductive polycrystalline Si layer under a conductive polycrystalline Si layer having a rugged surface is eliminated, for the purpose to eliminate possibilities in which dust is produced in the process.