发明名称 |
BEAM TRANSMISSION PART OF ION IMPLANTATION APPARATUS |
摘要 |
PURPOSE: A beam transmission part of an ion implantation apparatus is to suppress occurrence of secondary electrons generated by scattered ion beams being collided with side walls of beam transmission part. CONSTITUTION: A beam transmission part(24) of an ion implantation apparatus which receives an ion beam(38) from an ion beam source part(20) and allows the received ion beams to be transmitted to a beam implantation part, the beam transmission part comprises: a first lens(30) disposed in the front of the beam transmission part, for concentrating the transmitted ion beams thereto; an accelerator(28) disposed at the back of the first lens, for accelerating the ion beams concentrated by the first lens; a second lens(32) disposed at the end of the beam transmission part, for concentrating the accelerated ion beam to the beam implantation part; and a filter(34) disposed between the first lens and the accelerator, allowing the ion beams passing through the first lens to be concentrated to the accelerator.
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申请公布号 |
KR20000050402(A) |
申请公布日期 |
2000.08.05 |
申请号 |
KR19990000263 |
申请日期 |
1999.01.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OK, GYEONG HA;PARK, GEUM SIK;CHOI, GI CHEOL;O, SANG GEUN |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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