发明名称 BEAM TRANSMISSION PART OF ION IMPLANTATION APPARATUS
摘要 PURPOSE: A beam transmission part of an ion implantation apparatus is to suppress occurrence of secondary electrons generated by scattered ion beams being collided with side walls of beam transmission part. CONSTITUTION: A beam transmission part(24) of an ion implantation apparatus which receives an ion beam(38) from an ion beam source part(20) and allows the received ion beams to be transmitted to a beam implantation part, the beam transmission part comprises: a first lens(30) disposed in the front of the beam transmission part, for concentrating the transmitted ion beams thereto; an accelerator(28) disposed at the back of the first lens, for accelerating the ion beams concentrated by the first lens; a second lens(32) disposed at the end of the beam transmission part, for concentrating the accelerated ion beam to the beam implantation part; and a filter(34) disposed between the first lens and the accelerator, allowing the ion beams passing through the first lens to be concentrated to the accelerator.
申请公布号 KR20000050402(A) 申请公布日期 2000.08.05
申请号 KR19990000263 申请日期 1999.01.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 OK, GYEONG HA;PARK, GEUM SIK;CHOI, GI CHEOL;O, SANG GEUN
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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