发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce occurrence of leakage currents in a semiconductor integrated circuit device and to optimize the circuit operations of the device, and then to reduce the numbers of masks used for ion implantation and the number of processes performed for ion implantation. SOLUTION: A plurality of circuit blocks are grouped into a first circuit block group and a second circuit block group, and the first circuit block group is constituted of MOSFETs having non-doped silicon gates. The second circuit block group is constituted of P-channel MOSFETs having phosphorus-doped silicon gate electrodes.
申请公布号 JP2000216260(A) 申请公布日期 2000.08.04
申请号 JP19990017305 申请日期 1999.01.26
申请人 SANYO ELECTRIC CO LTD 发明人 YATSUYANAGI TOSHISUKE
分类号 H01L27/04;H01L21/28;H01L21/822;H01L21/8234;H01L27/088;(IPC1-7):H01L21/823 主分类号 H01L27/04
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