发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To increase the rate of writing data into a first memory means by an arrangement wherein a second memory means having higher writing rate than the first memory means constitutes a double buffer or a ring buffer and a CPU is released quickly at the end of the writing operation for temporary storage to the second memory means. SOLUTION: Page buffers 41, 42 are connected in parallel between a CPU 2 and a flash array 6 and perform writing operation at a higher rate than the flash array 6 to load a data sequentially, in units of page, from the CPU 2 and to store the data temporarily. When the size of a write data from the CPU 2 is 1 page, for example, the CPU 2 is released quickly regardless of the state of the flash array 6 by a moment when loading to the page buffer 41 is ended and by a moment when loading to the page buffers 41, 42 is ended in the case of 2 pages. Data is written at high rate to the flash array 6 when viewed from the CPU.</p>
申请公布号 JP2000215679(A) 申请公布日期 2000.08.04
申请号 JP19990009429 申请日期 1999.01.18
申请人 TAITO CORP 发明人 YOKOO MASAHIKO
分类号 G11C16/02;(IPC1-7):G11C16/02 主分类号 G11C16/02
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