| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having a improved sense margin by reducing the fluctuation of each signal even in a memory cell positioned at a remote edge. SOLUTION: The 1/2 level of a power supply potential is used for cell counter electrode level setting and digit line pre-charge in this semiconductor memory. A shorting circuit 103 for short-circuiting a cell counter electrode level HVCP1 and a pre-charge level (reference level) HVCD are arranged in a plurality of places in the neighborhood of a sense amplifier area. Thus, a sense margin can be improved by reducing the fluctuation of each signal due to coupling or the like due to concentrated refresh just after power-on even in a memory cell positioned at the edge far from the HVCC level generating circuit 101. |
