| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which fully functions to protect an element and can be improved in degree of integration. SOLUTION: A semiconductor device 50 is provided with an n-type MOS transistor, formed in a p-type well 14 formed into a p-type substrate 12, an n-type well 30 formed adjacent to the well 14, and first, and second protective elements 24 and 28 connected to a gate electrode 20. The element 24 is a p-n diode, constituted of a p-type well and an n+-type diffused region 26 provided in the p-type well and allows negative charges to escape to a p-side substrate. The second protective element 28 is a p-n diode constituted on an n-type well and a p+-type diffused region 32 provided in the p-type well and lets positive charges escape to a p-side substrate via a leakage current from the p-n junction between the n-type well and p-type substrate. In addition, in order to increase the region of the n-type well constituting a plasma damage protective circuit, the semiconductor device 50 is provided with a second p-type well 52 formed adjacent to the first n-type well 30, an n-type embedded well 54 formed under the second p-type well 52, and another second n-type well 56 connected to the n-type well 30 via the well 54. |
