| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device together with its manufacturing method, wherein an insulating film between a control gate and a floating gate is provided with a sufficient film-thickness difference. SOLUTION: A floating gate 9 with the upper part of a sidewall substantially vertical while the lower part tapered, a first insulating film 21, which is the upper part of the sidewall thicker than the lower part, formed on the sidewall of the floating gate 9 through thermal oxidation, a second insulating film 23 formed on the first insulating film 21, and a control gate 26 formed on the second insulating film 23, are provided. Thus, the insulating film between the control gate 26 and the floating gate 9 is provided with a sufficient difference in film-thickness.
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