| 摘要 |
A technique for forming a tungsten nitride film having a high growth speed without causing any dusting. The film forming apparatus 2 according to the present invention has a constitution where an adhesion preventive container 8 is placed in a reactor 11 and a object on which a film is to be formed 20 is located in the adhesion preventive container 8. In a first gas inlet equipment, a first feedstock gas is jetted from a shower nozzle 12. In a second gas inlet equipment, a second feedstock gas is jetted around the object on which a film is to be formed 20 between the shower nozzle 12 and the material 20. Owing to this constitution, the first feedstock gas and the second feedstock gas attain the surface of the object on which a film is to be formed without being mixed together, which enables the efficient performance of the reaction. Since the adhesion preventive container is heated to 150 to 250 DEG C, neither WF6.4NH3 nor WXN is formed and thus no dusting is caused. <IMAGE> |
