| 摘要 |
PURPOSE: A method for fabricating a polysilicon film is provided to reduce a processing time and to improve a production yield, by forming a good polysilicon film by forming a silicon thin film layer on an amorphous substrate and then depositing the polysilicon film with a low temperature process using the silicon thin film layer as a growth nucleus. CONSTITUTION: A silicon thin film is formed using an RF sputtering apparatus in an argon and hydrogen atmosphere, in order to form a polycrystalline silicon film used as a channel layer of a thin film transistor liquid crystal device(TFT LCD) on an amorphous glass substrate. Then, the thin film layer acts as a growth nucleus during a growth of the polycrystalline polysilicon film. Then, the supply of hydrogen gas is stopped, and the polycrystalline polysilicon is deposited at a low temperature below 450 deg.C in the argon gas atmosphere using the silicon thin film as a growth nucleus. Because, the polycrystalline polysilicon film is formed at a low temperature, the peeling phenomenon due to a moisture absorption is prevented and thus the polycrystalline polysilicon film has a good quality.
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