METHOD OF FORMING CHARGE STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming the charge-storing electrode of a semiconductor device is provided to increase the capacitance of the electrode by increasing the surface area of the electrode in the same layout area. CONSTITUTION: A poly silicon film(11) and an oxide film are formed by turns on a substrate having an upper layer and an interlayer insulating film(10). The poly silicon film(11) and the oxide film are etched selectively by an etching mask for forming a charge-storing electrode. A semi-sphere type of poly silicon grain(13) is deposited on the oxide film and on the sidewall of the pattern of the poly silicon film(11). The oxide film is etched selectively by using the semi-sphere type of poly silicon grain(13) as an etching barrier. The poly silicon film(11) is etched partially by using the etched oxide film as an etching barrier. The oxide film is removed.