EXPOSURE DEVICE AND EXPOSURE METHOD WHEREIN IT IS USED

摘要

PROBLEM TO BE SOLVED: To make a line width of a photoresist pattern uniform regardless of a thickness of a lower film by adjusting an exposure amount by an analyzed reflection light distribution map by a reflection light analyzer wherein a reflection light distribution map can be obtained by analyzing reflection light emitted from a reflection light detector. SOLUTION: The device has a reflection light detector 13 which can detect reflection light (b) which is formed by reflection of light cast on a wafer 3 from a lower film formed in a lower part of a photoresist film through a lens 11 and a mask 9 and reflection light detected by the reflection light detector 13 is analyzed by a reflection light analyzer 15. An exposure adjuster 17 which is connected to the reflection light analyzer 15 and adjusts exposure energy by using a shutter 19 by reflection light analyzed by the reflection light analyzer 15 is provided. The shutter 19 is connected to an exposure adjuster 7. Thereby, exposure energy can be adjusted according to reflectance from each section of a wafer.