| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide film structure whose adhesion is good without raising resistance owing to thermal treatment by sequentially stacking a first tantalum nitride, a second tantalum nitride whose nitriding degree differs from first tantalum nitride and a third tantalum nitride whose nitriding degree differs from the second tantalum nitride on a low resistance film. SOLUTION: A first tantalum nitride film at the lowest layer is formed on a substrate by a sputtering method and a second tantalum nitride film being an intermediate layer, whose nitriding degree differs from the first tantalum nitride film, is formed on the film. Namely, a condition is made in such a way that the nitriding degree of the second tantalum nitride film becomes smaller than the nitriding degree of the first tantalum nitride film in the lowest layer. Then, a third tantalum nitride film being the uppermost layer, whose nitriding degree differs from the second tantalum nitride film, is formed. Namely, a film forming condition is set to be the same as that of the first tantalum nitride film being the lowermost layer. Thus, film structure with good adhesion is formed without raising a resistance value owing to thermal treatment.</p> |
