| 摘要 |
PROBLEM TO BE SOLVED: To remove metallic contamination and particles adsorbed and adhering to the surface of a semiconductor substrate without generating irregularities incident to dissolution of a material by employing an aqueous solution containing a fluorine containing compound and an aqueous or water miscible organic solvent as a cleaning liquid after chemical mechanical polishing. SOLUTION: An aqueous solution containing a fluorine containing compound and an aqueous or water miscible organic solvent is employed as a cleaning liquid for cleaning the surface of a semiconductor substrate after chemical mechanical polishing. The cleaning liquid contains a quaternary ammonium salt shown by formula I, an organic carboxylate ammonium salt or mine salt shown by formula II, a surfactant, a chelating agent, an inorganic and/or organic acid or a mixture thereof. In the formula, R1, R2, R3 represent an alkyl group of 1-4C, Xa represents an inorganic or organic anion, a represents valent number of anion, Z represents a hydrogen atom or a 1-4 valent hydrocarbon group of 1-18C, n is an integer of 0-3, and m is an integer of 1-4.
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