发明名称 SEMICONDUCTOR SWITCH FOR ELECTRICAL POWER AND POWER CONVERTER
摘要 PROBLEM TO BE SOLVED: To improve temperature stability of a semiconductor switch for electrical power comprising a plurality of semiconductor switching elements by connecting a resistor having negative temperature dependence characteristic to a control terminal of each semiconductor switching element and locating at the position to receive the influence of temperature rise of respective semiconductor switching elements. SOLUTION: In a semiconductor switch 61 for electrical power, each thermistor 9A to 9C having negative temperature dependence characteristic is connected to respective gate terminal of the semiconductor switching element 1A to 1C. A time constant determined with a product of a sum of the external gate resistance 7 and internal resistance of each thermistor 9A to 9C and a parasitic capacitance between the gate terminal and emitter terminal of each of the semiconductor switching element 1A to 1C is individually reduced as the temperature rise of the semiconductor switching element 1A to 1C. Thereby, fluctuation of the turn-off time of the semiconductor switching element 1A to 1C resulting from fluctuation of temperature rise can be prevented.
申请公布号 JP2000209845(A) 申请公布日期 2000.07.28
申请号 JP19990002303 申请日期 1999.01.07
申请人 TOSHIBA CORP 发明人 TAKENAKA HIROSHI;TAI HIROMICHI
分类号 H01L27/04;H01L21/822;H01L29/78;H02M1/00;(IPC1-7):H02M1/00 主分类号 H01L27/04
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