| 摘要 |
PROBLEM TO BE SOLVED: To produce a highly reliable insulating film by supplying tetraethoxysilane(TEOS) having high purity and little impurities. SOLUTION: A method of forming a silica film includes the steps of introducing TEOS into an evaporation chamber 4 from a TEOS supply unit 18, introducing a carrier gas into the evaporation chamber 4, introducing a mixed gas of the TEOS and the carrier gas into a reaction chamber 5, introducing an oxidizing gas into the reaction chamber 5 from an oxidizing gas supply unit, heating a substrate in the reaction chamber to a desired temperature to form a silica film on the substrate, and discharging an exhaust gas from the reaction chamber. In this case, the TEOS supply unit 18 is provided with at least one optical liquid level sensor as a device for monitoring the amount of the TEOS. |
