SEMICONDUCTOR DEVICE AND PRODUCTION THEREOF

摘要

PROBLEM TO BE SOLVED: To shape a cavity part along with a recessed part between wiring in a semiconductor device for reducing the capacity between wirings by providing that cavity part between the wiring. SOLUTION: Plural wirings 35 and a second wiring layer forming a recessed part 30 between adjacent wiring 35 are formed on a first inter-layer insulating film 41. Next, a second inter-layer insulating film 43 composed of a CF film, for example, is formed on this wiring layer while using the filming materials of poor embedding characteristics. In this case, for example, a C6F6 gas is used as the filming material of poor embedding characteristics. When the CF film is formed by making this gas into a plasma, the CF film can be formed on the second wiring layer, while suppressing embedding of the CF film into the recessed part 30. Thus, an air gap 36 can be formed along with the recessed part 30 between wirings 35. With such a semiconductor device, the capacity between wiring can be reduced while suppressing reduction of mechanical strength.