PROTECTOR FOR SUBSTRATE SUPPORTING SURFACE AND PRODUCTION THEREOF

摘要

PROBLEM TO BE SOLVED: To prevent contaminating substances from reacting on the surface of a support while decreasing the bonding coefficient plasma etching the supporter surface of a ceramic chuck for supporting a semiconductor wafer, depositing a layer of protective coating material on the top and arranging a spacing mask. SOLUTION: A ceramic electrostatic chuck 104 has a protection coating 100 arranged on top of a plasma etched support surface 102 and a spacing mask 110 arranged on top thereof. The protection coating 100 is composed of a material having properties different from those of the support surface and thereby it does not react on the contaminating substances in the atmosphere. Formation of a conductive film on the ceramic chuck is thereby blocked. Consequently, the support surface 102 of the chuck 104 is blocked from the machining chamber environment without fail and the support surface of the chuck 104 does not touch the rear surface 114 of the wafer 112. The protection coating does not thereby disturb the tightening process significantly.