| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is stable and reduces the fluctuation or dispersion of characteristics, by suppressing the diffusion of an impurity inside a silicone substrate after compensation ion injection, and preventing the fluctuation of transistor characteristics or element separation characteristics. SOLUTION: An opening process for opening a contact hole 3 on the silicon substrate, a polysilicon depositing process for forming a polysilicon layer 5 by depositing polysilicon in the contact hole 3 formed by this opening process and on the surface of the silicon substrate, a compensation ion implantation process for injecting contact compensation ions into the polysilicon layer 5 deposited by this polysilicon depositing process, and an impurity diffusion process for diffusing the impurity from the inside of the polysilicon layer 5 to the silicon substrate by performing activation by heat treatment are performed in this order.
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