EPITAXIAL GROWTH SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a high-frequency induction heating type epitaxial growth system for a semiconductor with automatic carrying unit for a wafer. SOLUTION: A wafer mounting part of a suscepter 2 in a high-frequency induction heating type epitaxial furnace has three or more through hole per a wafer mounted thereon. The through hole has an inner diameter not larger than two thirds of a thickness of the suscepter 2 and an almost round cross section. Each thrusting pin 7 for pushing upward the wafer mounted on the suscepter is fitted loosely in the through hole. The apex of the thrusting pin 7 forms a face substantially flush with a surface of the suscepter 2. When the thrusting pin 7 is pushed upward by a pushing jig 8 provided at the backside of the suscepter 2, the wafer 3 mounted on the face of the suscepter 2 can be isolated from the suscepter 2 in an epitaxial growth system.