发明名称 ION IMPLANTER
摘要 PROBLEM TO BE SOLVED: To stably generate a plasma by preventing electrical insulation between a filament and an arc chamber from being damaged by the polluting matter to the surface of an insulator for fixing the filament to the arc chamber of an ion implanter. SOLUTION: In this ion implanter provided with an arc chamber 12 that is installed on an ion source body 11, has a filament 13 formed in its inside, and converts a gas into plasma, opening parts 14 are formed at one end part of the arc chamber 12, and the filament 13 is extended outside the arc chamber 12 with its non-contact state in relation to the opening parts 14 kept.
申请公布号 JP2000208091(A) 申请公布日期 2000.07.28
申请号 JP19990005124 申请日期 1999.01.12
申请人 SONY CORP 发明人 MASUZAKI YOSHIFUMI
分类号 H01J27/08;H01J37/08;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 主分类号 H01J27/08
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