| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an n-type compound semiconductor thin film, a method of manufacturing thereof and a solar cell using the same, by allowing a compound semiconductor thin film expressed as a composition formula AB3C5 (A is a group Ib element, B is a group IIIb element, and C is a group VIb element) in which a group II element is contained. SOLUTION: A compound semiconductor thin film includes a rear surface electrode 22, a p-type compound semiconductor thin film 23, an n-type compound semiconductor thin film 24, a buffer layer 25, a window layer 26 and a transparent conductive film 27. The p-type compound semiconductor thin film 23 is expressed by the compositional formula DEF2 (D is a group Ib element, E is a group IIIb element and F is a group VIb element), and the n-type compound semiconductor thin film 24 is constituted by making a compound semiconductor thin film expressed by the formula AB3C5 (A is a group Ib element, B is a group IIIb element, and C is a group VIb element) to contain a group II element.</p> |
