| 摘要 |
PROBLEM TO BE SOLVED: To connect a bit line with a connection plug with self alignment in the direction of a word line. SOLUTION: After a word line WL functioning as a gate electrode of a selection MISFET in a DRAM is formed on the main surface of a semiconductor substrate, a plug (to be formed on a connection plug BP and a pattern SNCT) is formed to be connected with the source/drain of an MISFET is formed on an insulating film covering the word line WL. Then, an insulating film covering the plug is formed, and a tungsten film having a pattern reverse to that of a bit line pattern is formed on the insulating film. The insulating film is etched in part using the tungsten film as a mask to form a wiring groove 18a. Furthermore, a photoresist film 35, which has an opening and is formed linearly in the direction of the word line WL, is formed on the connection plug BP, and the remaining part of the insulation film is etched using the photoresist film 35 and tungsten film as a mask, to expose the connection plug. |
