发明名称 PHOTORESIST CROSSLINKER, PHOTORESIST COPOLYMER, ITS PRODUCTION, PHOTORESIST COMPOSITION, PHOTORESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To maximize the synthesis yield of a photoresist copolymer, to reduce the unit synthesis cost of the copolymer and to enable mass production by using a photoresist crosslinker containing a specified compound. SOLUTION: This photoresist crosslinker contains a compound of the formula, wherein V is CH2, CH2CH2, oxygen or sulfur, Y is 1-12C linear or branched alkyl, oxygen or 1-12C linear or branched ether, R' and R" are each H or CH3, (i) is an integer of 1-5 and (n) is an integer of 0-3. The compound of the formula is selected from the group consisting of ethylene glycol-di(5-norbornene-2- carboxylic acid-3-carboxylate), 1,3-propanediol-di(5-norbornene-2-carboxylic acid-3- carboxylate), 1,4-butanediol-di(5-norbornene-2-carboxylic acid-3-carboxylate), etc.
申请公布号 JP2000206682(A) 申请公布日期 2000.07.28
申请号 JP19990371157 申请日期 1999.12.27
申请人 HYUNDAI ELECTRONICS IND CO LTD 发明人 LEE GEUN SU;KOH CHA WON;JUNG JAE CHANG;JUNG MIN HO;BAIK KI HO
分类号 G03F7/027;C07C69/753;C07D519/00;C08F220/16;C08F222/06;C08F232/04;G03F7/004;G03F7/039 主分类号 G03F7/027
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