| 摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method for accurately evaluating a wafer surface quality, especially fine defects on the surface of a wafer and to provide a silicon wafer, for which a contamination or defect level that cannot be confirmed conventionally, is confirmed with this evaluation method, and especially a silicon wafer with which device characteristics will not degrade. SOLUTION: For this evaluation method, a silicon wafer is evaluated by subjecting the surface of the silicone wafer to a long-time etching treatment, while using a treatment liquid composed of ammonia, a mixture of hydrogen peroxide and water and by investigating the number of light point defects(LPD) formed on the surface of the silicon wafer and the concentration of ammonia in the treatment liquid is made higher than that of hydrogen peroxide.
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