发明名称 REDUCED PRESSURE VAPOR PHASE DEPOSITION SYSTEM AND METHOD FOR FORMING FILM
摘要 PROBLEM TO BE SOLVED: To make it possible to improve unevenness in thickness of deposited film in an inner wall of an inner tube, and reduce the frequency of maintenance. SOLUTION: A quartz boat 1 for mounting a substrate, on which a film is formed during a film forming step, a quartz table for mounting the boat 1, and an inner tube 3 provided around the boat 1 and the table 2, are rotated. Then, stress developed by uneven film formation on an inner wall of an inner tube 3 can be prevented.
申请公布号 JP2000208418(A) 申请公布日期 2000.07.28
申请号 JP19990004606 申请日期 1999.01.11
申请人 NEC CORP 发明人 SHIODA KUNIHIRO
分类号 H01L21/205;C23C16/44;(IPC1-7):H01L21/205 主分类号 H01L21/205
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