发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device for forming an electrode conductor with low resistance and high Q-inductor suitably available in high frequency. SOLUTION: In this invention, an electrode wiring member 12 is formed on an upper face of a semiconductor substrate 11. The upper face of the electrode wiring member 12 is coated with photo-sensitive resin 21 and an exposure and development step is carried out to open the photo-sensitive resin, and after curing, the electrode wiring member 12 is etched with a mask of the photo-sensitive resin 21.
申请公布号 JP2000208432(A) 申请公布日期 2000.07.28
申请号 JP19990007755 申请日期 1999.01.14
申请人 TOSHIBA CORP 发明人 YAMASHITA ATSUKO;SUGAWARA YASUHARU
分类号 H01L21/3213;H01L21/28;(IPC1-7):H01L21/28;H01L21/321 主分类号 H01L21/3213
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