Ambipolar organic thin-film field-effect transistor and its fabrication method

摘要

In a thin-film field-effect transistor having a metal/insulator/semiconductor (MIS) structure, the semiconductor layer is formed of an organic compound, and the insulator layer is formed of an organic compound which is soluble in an organic solvent and exhibits spontaneous polarization similar to ferroelectric material. The transistor exhibits n-type transistor characteristics when polling is conducted by applying a voltage which is not less than a coercive electric field and not more than a withstand voltage between source and gate electrodes, the transistor exhibits p-type transistor characteristics when polling is absent.