| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a resist underlay film which has heat resistance and bent resistance of a pattern to be used in a lithography process of the manufacture of a semiconductor device.SOLUTION: A composition for forming a resist underlay film for lithography contains a polymer containing having a unit structure of the chemical formula 1 (in the formula (1), A is a hydroxy group-substituted phenylene group derived from polyhydroxybenzene, and B is a monovalent condensed aromatic hydrocarbon ring group obtained by condensing 2 to 4 benzene rings). A is a hydroxy group-substituted phenylene group derived from catechol, resorcinol, hydroquinone, pyrogallol, hydroxyquinol, or phloroglucinol. The B condensed aromatic hydrocarbon ring group is a naphthalene ring group, an anthracene ring, or a pyrene ring group. The B condensed aromatic hydrocarbon ring group has a halogen group, a hydroxyl group, a nitro group, an amino group, a carboxyl group, a carboxylic acid ester group, a nitrile group, or a combination thereof, as a substituent. |
