Halbleiterbauelement und Verfahren zu dessen Herstellung,申请号DE19991001210-传众专利搜索

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发明名称	Halbleiterbauelement und Verfahren zu dessen Herstellung
摘要	The invention relates to a semiconductor element with at least one layer of tungsten oxide (WOx), optionally in a structured tungsten oxide (WOx) layer. The inventive semiconductor element is characterized in that the relative permittivity ( epsilon r) of the tungsten oxide layer (WOx) is higher than 50.
申请公布号	DE19901210(A1)	申请公布日期	2000.07.27
申请号	DE19991001210	申请日期	1999.01.14
申请人	SIEMENS AG	发明人	SCHREMS, MARTIN;DRESCHER, DIRK;WURZER, HELMUT;TEWS, HELMUT
分类号	H01L29/78;H01L21/28;H01L21/316;H01L21/8242;H01L27/108;H01L29/51;(IPC1-7):H01L29/78	主分类号	H01L29/78
代理机构		代理人
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