| 摘要 |
<p>There is a method and apparatus for plating in which electroless copper plating is performed in a contact hole and an interconnect trench on a minute scale of a semiconductor integrated circuit device, and a plating structure. Organic material originated from an organic gas carried over from the preceding step is removed from the inner surface of a blind hole, thereafter the surface of the barrier layer (7) is subjected to predetermined pretreatments comprising a hydroxylation treatment, a coupling treatment, a Pd colloidal solution treatment and the like, and following the pretreatments, electroless plating (8) with copper is effected desirably under influence of ultrasonic waves. Hence, a uniform, good quality plating layer (8) is formed inside and outside the hole and a CMP processing following the plating is performed with ease. <IMAGE></p> |
