FABRICATION METHOD OF FUSE MEMBER OF SEMICONDUCTOR MEMORY

摘要

PURPOSE: A fabrication method of fuse member of a semiconductor's memory is provided to minimize the layout area of fuse member with shut off the moisture penetration through the boundary of BPSG membrane and TEOS membrane. CONSTITUTION: A fuse member of a semiconductor's memory is comprising as; forming an insulating layer(22) on a semiconductor substrate(21), execute a patterning after polysilicone(23) evaporating deposited with a fuse of cutting capable material by the laser beam on the upper insulating layer(22); the polysilicone(23) forms a layers interval insulating membrane(24) on the upper of the patterned construction, etching shut off membrane(25) is formed on the upper of layers interval insulating membrane(24); a leveling membrane of BPSG membrane(26) is formed on the upper construction of the etching retard membrane(25); forming a contact hole by etching of a portion of the BPSG membrane(26) and the layers interval insulating membrane(24) to exposure the both side of boundary of the polysilicone(23) and etching the BPSG membrane(26) to expose the except region of the both side boundary of the etching retard membrane(25).