Method of writing any patterns on a resist by an electron beam exposure and electron beam exposure system

摘要

The present invention provides a method of writing at least a first pattern on a first region of a resist by a variable shaped electron beam exposure. The resist has at least a second region on which at least a second pattern is written by one-shot electron beam exposure. The second region is bounded by a boundary line with the first region so that the fist and second patterns are bounded by the boundary line with each other. The method comprises the steps of: setting a re-size amount; re-sizing a calibrated size of a variable shaped electron beam by a first amount which is smaller than the re-size amount; and shifting an origin for a shot of the variable shaped electron beam by a second amount which is substantially equal to a subtraction of the first amount from the re-size amount before a variable shaped electron beam shot is made.