| 摘要 |
PURPOSE: A field effect transistor and a fabrication method thereof are provided which enables to use a copper as a gate of the field effect transistor without deteriorating the characteristics of the transistor. CONSTITUTION: A field effect transistor includes a bottom gate electrode(103), a top gate electrode(104), a first, a second(105) and a third barrier layer(106) and a source(109) and a drain(110). The bottom gate electrode is formed on a silicon substrate(101) with silicon through a gate insulating layer(102). The top gate electrode is formed above the bottom gate electrode with a copper. The first barrier layer has a conductivity enough to drive a channel on the bottom gate electrode, and blocks the diffusion of the copper by covering the top surface of the bottom gate electrode. The second barrier layer has a bottom part contacted with the first barrier layer, and blocks the diffusion of the copper by covering the side of the top gate electrode. The third barrier layer has an end part contacted with the second barrier layer, and blocks the diffusion by covering the top surface of the top gate electrode. The source and the drain are formed in the silicon substrate to sandwich a region below the bottom gate electrode.
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