METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is to suppress occurrence of crack by using a silicate glass in which P, PH3 or B is implanted instead of a USG(undoped silicate glass) as a sacrificing film. CONSTITUTION: A method for forming a capacitor of a semiconductor device comprises the steps of: forming a lower insulating layer(15) having a bit line contact plug(13) and a storage electrode contact plug(17) on the semiconductor device; forming a bit line(19) connected to the contact plug and forming a spacer(21); forming a silicate glass layer(23) acting as a sacrificing insulating film; implanting ions to the silicate glass layer and heat treating the silicate glass layer; forming a reflection preventing film on the silicate glass layer; forming a storage electrode contact hole to expose the contact plug; forming a conductor for the storage electrode on entire surface; forming a cylinder type conductor for the storage electrode by exposing the silicate glass layer with chemical-mechanical polishing the conductor for storage electrode; wet etching the silicate glass layer to have a height lower than that of the conductor for storage electrode; and forming a hemispherical conductor selectively on the conductor.