| 摘要 |
PURPOSE: A method of forming silicide of semiconductor is provided to easily perform a silicide forming process of a gate electrode. CONSTITUTION: A semiconductor substrate(10) with a field oxide film(20) formed is deposited with a gate oxide film(30), and is deposited with a mask oxide film, a lower photoresist film, and a plasma enhanced chemical vapor deposition(PECDV) oxide film by using a photoresist film. An upper photoresist film is layered on a portion to be formed with a gate electrode. The lower photoresist film and the mask oxide film exist on the portion to be formed with the gate electrode, and the a mask oxide film, the lower photoresist film, and the PECDV oxide film are removed by etching to expose a lower polysilicon layer(40) on the other portion. After the lower photoresist film existed on the portion to be formed with the gate electrode is removed, the lower polysilicon layer is etched by using the mask oxide film as a hard mask. After removing the mask oxide film, a spacer film(95) is formed on a side portion of the lower polysilicon layer.
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