| 摘要 |
PURPOSE: An electromigration-resistant copper film structure and a process for forming the structure are provided to improve electromigration resistance. CONSTITUTION: An electromigration-resistant copper film(25) includes a seed layer(6) indirectly formed on a substrate(2), the seed layer(6) having copper and additives such as indium, tin, titanium, or chromium. The film(25) further includes a copper-containing bulk layer(10) deposited on the seed layer(6), the bulk layer(10) having a grain boundary and an exposed surface, and further, the exposed surface forming roughened surface(11'). Additionally, at least, one impurity layer(13) having oxygen, sulfur, nitrogen, or carbon is laminated on the bulk layer(10), and another bulk layer(15) is then electro-deposited on the impurity layer(13). While the subsequent annealing process is performed, the additive in the seed layer(6) is diffused toward the impurity layer(13), and consequently forms intermetallic compound and other various complex resistant to grain growth and surface mobility. In particular, both the compound and the complex are formed along the grain boundary in the bulk layer(10) and preferentially disposed toward the roughened surface(11'). Accordingly, the electromigration resistance of the copper-containing film(25) is improved. |
