| 摘要 |
PURPOSE: An UV GaN device having boron added therein is to use a ByGa1-yN layer containing boron as a base layer of a lower clad layer of AlxGa1-xN, thereby reducing a defect due to a difference between lattice constants thereof. CONSTITUTION: An UV GaN device having boron comprises a substrate(1), a first clad layer(4) which is formed of n-AlxGa1-xN on the substrate, a GaN active layer(5) which is formed on the first clad layer of n-AlxGa1-xN, a second clad layer(6) which is formed of p-AlxGa1-xN on the GaN active layer, a first electrode and a second electrode which are electrically connected to the first and the second clad layers, respectively and a n-ByGa1-y layer(3) which is placed between the substrate and the first clad layer of n-AlxGa1-xN, wherein 0≤x≤1 and 0≤y≤1. In the device, at least one element out of boron and aluminum is further added to the GaN active layer, and a buffer layer(2) is further added between the substrate and the n-ByGa1-y layer. |
