METHOD OF FORMING FIELD OXIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a field oxide is to remove a bird's beak at side portions of the field oxide, thereby decreasing the degradation of an electrical property due to etching damage. CONSTITUTION: A method of forming a field oxide(70) comprises the steps of: sequentially depositing a pad oxide film(20) and a nitride film(30) on a semiconductor substrate(10), followed by etching a photoresist film to form a contact hole; annealing the substrate for compensating the damage of the substrate exposed from the contact hole and then growing a selective buffer layer on the substrate; depositing a spacer nitride film on the epi selective buffer layer grown in the contact hole; and etching the spacer nitride film to form a spacer and then growing an oxide layer in the contact hole to form the field oxide.