发明名称 METHOD FOR FORMING ANTI-FUSE USING METAL OXIDE LAYER
摘要 PURPOSE: A method for forming an anti-fuse is to easily perform a fuse repair by applying a bias to a metal oxide film in repairing a device. CONSTITUTION: An anti-fuse forming method comprises the steps of: depositing an insulating layer(20) on a first metal layer(10); depositing and etching a photosensitive film on the resultant material; forming a contact hole to expose the first metal layer; forming a metal oxide film(40) by oxidizing the first metal layer under an oxygen gas atmosphere within a chamber; and depositing a second metal layer(50) in the contact hole by pumping and exhausting an oxygen gas within the chamber. The second metal layer is an aluminum or a copper. The metal oxide film is formed by reacting a copper with an oxygen at an interface between the first metal layer and the second metal layer.
申请公布号 KR20000045897(A) 申请公布日期 2000.07.25
申请号 KR19980062510 申请日期 1998.12.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 CHOI, YEONG HO;KIM, DONG CHAN
分类号 H01L27/04;(IPC1-7):H01L27/04 主分类号 H01L27/04
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