发明名称 |
METHOD FOR FORMING ANTI-FUSE USING METAL OXIDE LAYER |
摘要 |
PURPOSE: A method for forming an anti-fuse is to easily perform a fuse repair by applying a bias to a metal oxide film in repairing a device. CONSTITUTION: An anti-fuse forming method comprises the steps of: depositing an insulating layer(20) on a first metal layer(10); depositing and etching a photosensitive film on the resultant material; forming a contact hole to expose the first metal layer; forming a metal oxide film(40) by oxidizing the first metal layer under an oxygen gas atmosphere within a chamber; and depositing a second metal layer(50) in the contact hole by pumping and exhausting an oxygen gas within the chamber. The second metal layer is an aluminum or a copper. The metal oxide film is formed by reacting a copper with an oxygen at an interface between the first metal layer and the second metal layer.
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申请公布号 |
KR20000045897(A) |
申请公布日期 |
2000.07.25 |
申请号 |
KR19980062510 |
申请日期 |
1998.12.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
CHOI, YEONG HO;KIM, DONG CHAN |
分类号 |
H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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