| 摘要 |
A method for forming n- and p-type contacts for CMOS integrated circuits is described wherein the contact openings are ion implanted after being etched to provide supplemental doping to the exposed device elements in order to secure a reliable low resistance interface with subsequently deposited contact metallurgy The p-type contact openings and the n-type contact openings are patterned, etched, and ion implanted separately, thereby requiring only two photolithographic steps. By etching and implanting the p-contacts and n-contacts separately, the method eliminates one highly complex and contaminative photolithographic step and introduces a less complex etch step with reduced contamination risk, thereby achieving a cost saving by improving yield and reducing process time. It is optional which contacts are processed first.
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