INPUT PAD OF DYNAMIC RANDOM ACCESS MEMORY

摘要

PURPOSE: An input pad of a dynamic random access memory is provided to adjust an input resistance by adjusting a capacitor and a resistance in the p-type doping region so as to reduce the input resistance. CONSTITUTION: An input pad of a dynamic random access memory includes a well(50), a lower portion of an interconnection(60), and an active region. The well(50) is made of a material whose characteristics is opposite to that of a wafer. The well is formed under the pad open region at which the bonding is performed. The lower portion of an interconnection(60) which is connected to the pad is coupled with a ground voltage. The active region is made of a material whose characteristics is opposite to that of the well already described. The region between the interconnection layer and the active region excludes another interconnection layer.