| 摘要 |
PURPOSE: A polishing composition to be used for polishing substrates for semiconductors, photomasks and various memory hard disks, particularly to a polishing composition useful for polishing for planarization of the surface of device wafers in e.g. semiconductor industry, and a polishing method employing such a composition is provided. CONSTITUTION: A polishing composition contains, as an abrasive, at least one member selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, titanium oxide, silicon nitride, zirconium oxide, silicon carbide and manganese dioxide. The adhesives are intended to polish the surface to be polished by the mechanical action as abrasive grains. Among them, the particle size of silicon dioxide is usually from 0.015 to 0.05 mu m, preferably from 0.02 to 0.04 mu m as an average particle size observed by a scanning electron microscope, and the specific surface area measured by a BET method is usually from 50 to 150 m¬2/g, preferably from 70 to 120 m¬2/g. Likewise, the particle size of aluminum oxide, zirconium oxide, titanium oxide, silicon nitride, silicon carbide or manganese dioxide, is usually from 0.03 to 0.1 mu m, preferably from 0.05 to 0.08 mu m, as an average particle size observed by a scanning electron microscope, and the specific surface area measured by BET method is usually from 20 to 90 m¬2/g, preferably from 30 to 70 m¬2/g.
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