| 摘要 |
PURPOSE: A method for manufacturing a high dielectric constant capacitor having a plug poly is provided to form a silicide layer on the surface of the plug poly. CONSTITUTION: A method for manufacturing a high dielectric constant capacitor having a plug poly includes following steps. At the first step, a plug poly is formed on the surface of a semiconductor substrate(10) having semiconductor devices. The plug poly is made of a polysilicon material which is connected to the semiconductor device through a contact hole. At the second step, a silicide layer(12) is formed on the upper contact of the plug poly. At the third step, an oxidation passivation layer(34) is formed on the surface of the interlayer insulation layer(20). The oxidation passivation layer is formed with TiAIN. At the fourth step, a lower electrode(31) made of a metal layer is formed on the oxidation passivation layer. At the fifth step, a high dielectric layer(37) is formed on the surface of the lower electrode layer. At the sixth step, an upper electrode(38) made of metal is formed on the surface of the high dielectric layer.
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