| 摘要 |
An n-type modulation dope multiple quantum well semiconductor laser having a multiple quantum well structure comprising a heterojunction structure of a well layer and a barrier layer, wherein the well layer is made of a nondoped semiconductor material, the barrier layer is made of a semiconductor material modulation-doped with an n-type dopant, a low-reflectance film is formed on the front edge face, a high-reflectance film is formed on the back edge face, the cavity length is 800 .mu.m or more, and the mirror loss (.alpha.m) expressed by .alpha.m=(1/2L)ln(1/(Rf.Rr)) (where L is the cavity length (cm), Rf is the reflectance of the front edge face, and Rr is the reflectance of the back edge face) is 15 cm-1 or less. The output of the laser is high compared with conventional nondoped MQW semiconductor lasers, and the industrial value of the laser used as, e.g., a 1480-nm laser for EDFA excitation is high.
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