| 摘要 |
The invention relates to a power MOS element which comprises a drift region with a dopant of a first dopant type and a channel region with a dopant of a second dopant type that is complementary to said first dopant type, said channel region bordering on the drift region. The power MOS element further comprises a source region with a dopant of a first dopant type, said source region bordering on the channel region. The MOS element comprises also a plurality of substantially parallel gate trenches (12a - 12f) which extend as far as the drift region and which are provided with an electrically conductive material which is insulated from the transistor region by an insulator. The individual gate trenches are linked via a connecting gate trench (22a, 22b). A gate contact is linked with the active gate trenches in a electrically conductive manner merely by way of contact holes in the connecting gate trench. For producing said element only three photolithographic steps are required, namely etching the gate trenches and the connecting gate trench, producing the contact holes for the source region and the channel region and the connecting gate trench and for the final structuring of the gate contact (24 and the source contact (20). The invention provides a flexible layout which facilitates placing the gate contact (24) also in the middle or at another location of the power MOS element without additional costs and/or effort. Optionally, margin limiting structures (26a, 26b) can be produced in the form of circumferential floating rings or of floating magnetoresistors in parallel to the production of the active transistor region without additional process steps. |
