发明名称 Cr TARGET MATERIAL AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To allow the material to withstand the high amt. of B to be added or the high film forming rate condition without generating the troubles such as cracks and breaking by allowing it to have a compsn. contg. a specified amt. of B and Cr as the main component and controlling the area ratio of a compd. phase of Cr and B to a specified value. SOLUTION: This Cr target material contains >=5 at% B and Cr as the main component, in which, if required, <=30% in Cr is substituted by V, Mo or the like of an equivalent, and the area ratio of a compd. phase of Cr and B is made to <=40%, desirably to about <=32%. This compd. phase of Cr and B is high in hardness, is extremely brittle and low in deflective strength. By controlling the area ratio of the compd. phase to the value equal to or below the prescribed value, the deflective strength of the target material is improved, and at the time of sputtering or the like, the troubles such as cracks are eliminated. The target in which the area ratio is controlled can be obtd. by using a powdery material as a starting raw material and compact-pressing this at <=1,200 deg.C by using a HIP or hot pressing method.
申请公布号 JP2000199055(A) 申请公布日期 2000.07.18
申请号 JP19990000904 申请日期 1999.01.06
申请人 HITACHI METALS LTD 发明人 IWATA HITOSHI
分类号 C23C14/34;C22C27/06;(IPC1-7):C23C14/34 主分类号 C23C14/34
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